REACTOR, PLANT AND INDUSTRIAL PROCESS FOR THE CONTINUOUS PREPARATION OF HIGH-PURITY SILICON TETRACHLORIDE OR HIGH-PURITY GERMANIUM TETRACHLORIDE

摘要

The present invention using a low temperature plasma of one or more hydrogen - silicon tetrachloride to be purified is contaminated with compounds containing or germanium tetrachloride to handle , and fractionation of high-purity silicon tetrachloride was purified from the resulting treated phase by distillation or the germanium tetrachloride by separation reactor for the production of high-purity silicon tetrachloride or high-purity germanium tetrachloride , carried out in a plant and there which relates to a continuous industrial process , in which process a dielectric (4.4) , the high-voltage electrode (4.3) and a grounded metallic heat exchanger (4.2) are oriented parallel to the plasma reactor to the longitudinal axis vector parallel to each other at the same time the force of gravity ( 4) is performed in .