ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION

摘要

The present invention provides: an active light sensitive or radiation sensitive composition which contains (A) a compound that generates an acid by irradiation of active light or radiation, (P) a compound, the solubility of which in alkaline developer liquids is increased by the action of an acid and (N) at least one compound selected from the group consisting of compounds [N-A], [N-B] and [N-C], and which enables the formation of an ultrafine pattern (for example, one having a line width of 50 nm or less) that satisfies high resolution, excellent pattern shape and low line width roughness (LWR) at the same time at high levels; and a resist film, a pattern forming method, a resist-coated mask blank, a method for producing a photomask, a photomask, a method for manufacturing an electronic device, and an electronic device, each of which uses this active light sensitive or radiation sensitive composition. [N-A] Resins, the solubility of which in alkaline developer liquids is decreased by the action of an acid, active light, radiation or an activated species [N-B] Compounds which generates an acid by irradiation of active light or radiation, and the solubility of which in alkaline developer liquids is decreased by the action of an acid, active light, radiation or an activated species [N-C] Low-molecular-weight compounds, the solubility of which in alkaline developer liquids is decreased by the action of an acid, active light, radiation or an activated species