首页> 外国专利> ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION

ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION

机译:有源光敏感或辐射敏感成分,以及抗蚀膜,图案形成方法,抗蚀剂涂覆的面膜,制造光掩模的方法,光掩模,制造电子设备的方法和电子装置,在每个方面都是有朝一日的组成

摘要

the present invention, (A) a compound generating an acid by irradiation of actinic ray or radiation, (P) compounds which are soluble in an alkaline developer increases by the action of an acid, and (N ) to [NA], [NB], and [NC] by the sense of an actinic ray or last radiation sensitive composition containing a compound of at least one member selected from the group consisting of, for very fine (for example, line width of 50nm or less) in the formation of the pattern, a high resolving power, excellent pattern profile and a lower line Weed's roughness (LWR) at the same time a sense of an actinic ray or last radiation sensitive composition, and using the resist film, a pattern forming method which can satisfy a high level , resist coating mask blank, provides method of producing a photomask, the photomask manufacturing method of the electronic device, and an electronic device. [N] A resin-to decrease solubility in an alkali developing solution by acid, or the action of actinic light radiation, or active species N-compounds [B] generating an acid by irradiation of actinic ray or radiation, and also decrease the solubility in an alkali developing solution by the action of an acid, an actinic ray or radiation, or active species Low molecular weight compounds that decrease the solubility in an alkali developing solution by the [N-C] acid, or the action of actinic light radiation, or active species
机译:在本发明中,(A)通过光化射线或放射线的照射产生酸的化合物,(P)可溶于碱性显影剂的化合物通过酸的作用而增加,并且(N)为[NA],[NB]。 ”和“ NC”的含义,包括对地层非常细(例如,线宽为50nm或更小)的光化射线或最后一种辐射敏感组合物,其中所述组合物包含至少一种选自以下的化合物图案的形成,高分辨力,优异的图案轮廓和较低的线杂草粗糙度(LWR),同时具有光化射线或最后的辐射敏感性组合物感,并且使用抗蚀剂膜,可以满足以下要求的图案形成方法:本发明提供一种高级抗蚀剂涂布掩模坯料,其提供了制造光掩模的方法,电子设备的光掩模制造方法以及电子设备。 [N]一种树脂,用于通过酸或光化辐射或活性物质N化合物的作用来降低在碱显影液中的溶解度,[B]通过光化射线或辐射的照射生成酸,并降低溶解度在碱显影液中通过酸,光化射线或辐射或活性物质的作用而降低的分子量的低分子量化合物,它们通过[NC]酸在碱显影液中的溶解度降低,或在光化光辐射的作用下,或活性物种

著录项

  • 公开/公告号KR20160047560A

    专利类型

  • 公开/公告日2016-05-02

    原文格式PDF

  • 申请/专利权人 후지필름 가부시키가이샤;

    申请/专利号KR20167008116

  • 发明设计人 야마구치 슈헤이;

    申请日2014-09-10

  • 分类号G03F7/004;G03F1/50;G03F7/027;G03F7/038;G03F7/039;G03F7/32;H01L21/033;

  • 国家 KR

  • 入库时间 2022-08-21 14:14:35

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