首页>
外国专利>
NORMALLY-OFF III-NITRIDE TRANSISTORS WITH HIGH THRESHOLD-VOLTAGE AND LOW ON-RESISTANCE
NORMALLY-OFF III-NITRIDE TRANSISTORS WITH HIGH THRESHOLD-VOLTAGE AND LOW ON-RESISTANCE
展开▼
机译:具有高阈值电压和低导通电阻的常关型III氮化物晶体管
展开▼
页面导航
摘要
著录项
相似文献
摘要
A III-nitride transistor includes a III-nitride channel layer, a barrier layer over the channel layer, the barrier layer having a thickness of 1 to 10 nanometers, a dielectric layer on top of the barrier layer, a source electrode contacting the channel layer, a drain electrode contacting the channel layer, a gate trench extending through the dielectric layer and barrier layer and having a bottom located within the channel layer, a gate insulator lining the gate trench and extending over the dielectric layer, and a gate electrode in the gate trench and extending partially toward the source and the drain electrodes to form an integrated gate field-plate, wherein a distance between an interface of the channel layer and the barrier layer and the bottom of the gate trench is greater than 0 nm and less than or equal to 5 nm.
展开▼