Provided are a storage device and a storage method. The storage device comprises: a control module and a storage block, wherein the storage block is made of a phase change material, the storage block comprises multiple bit lines, and the control module is used for obtaining to-be-written data on each bit line of the multiple bit lines and further used for simultaneously writing at least one group of consecutive 0s in the to-be-written data to the storage block along the each bit line. The control module in the storage device can reduce a thermal crosstalk impact through simultaneously writing the at least one group of the consecutive 0s in the to-be-written data along the bit lines.
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