PROCESS OF PREPARING LOW DIELECTRIC CONSTANT THIN FILM LAYER USED IN INTEGRATED CIRCUIT

摘要

A process of preparing a low dielectric constant thin film layer used in an integrated circuit, comprising: extracting gas out of a furnace; when the vacuum level within the furnace is less than 10^-3Pa, starting a 13.36 MHz radio frequency power supply (5) and a matcher (6); sending the exhaust nitrogen gas, used to remove the remaining gas out of the furnace (1) by a third gas inlet pipe (111), into the furnace (1) through a second pressure gas mixing tank (9) and a second nozzle (15) sequentially; uniformly mixing octamethyl cyclotetrasiloxane and cyclohexane, and introducing same into a pressure stainless steel tank (7), and, respectively by a first gas inlet tube (111) and a second gas inlet tube (112), introducing bubbled nitrogen gas and inert gas into the furnace (1) sequentially through a first pressure gas mixing tank (8), the pressure stainless steel tank (7) and a first nozzle (13); after deposition, transferring the deposited thin film layer to a heating zone of the furnace (1) for annealing, obtaining a low dielectric constant thin film layer. The thin film layer has more uniform chemical ingredients, excellent thermal stability and hardness, and the process improves smoothness of the thin film.