SEMICONDUCTOR MATERIAL HAVING GRAPHYNE WITH ADJUSTABLE ENERGY BANDGAP USING HYDROGEN ADSORPTION

摘要

The present invention relates to a semiconductor material having graphyne with an adjustable energy bandgap using hydrogen adsorption. By having the bandgap determined by a geometrical structure and the hydrogen concentration of adsorbed hydrogen in a sp^2- or sp^3-hydrogenated graphyne composite in which a hydrogen atom is attached on a sp-combined carbon atom of graphyne, which is a two dimensional layer comprising a network of carbon atoms having sp- and sp^2-combination, the bandgap of hydrogenated graphyne can be controlled up to 3 eV by structural change of the geometrical structure of the adsorbed hydrogen, and the modulation of the band gap can be controlled up to 5 eV by the change of hydrogen concentration. Accordingly, the bandgap can be controlled arbitrarily, so the present invention can be applied to a new application device such as an optical device or the like.;COPYRIGHT KIPO 2015