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Semiconductor structures and methods with high mobility and high energy bandgap materials
Semiconductor structures and methods with high mobility and high energy bandgap materials
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机译:具有高迁移率和高能带隙材料的半导体结构和方法
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摘要
An embodiment is a structure comprising a substrate, a high energy bandgap material, and a high carrier mobility material. The substrate comprises a first isolation region and a second isolation region. Each of first and second isolation regions extends below a first surface of the substrate between the first and second isolation regions. The high energy bandgap material is over the first surface of the substrate and is disposed between the first and second isolation regions. The high carrier mobility material is over the high energy bandgap material. The high carrier mobility material extends higher than respective top surfaces of the first and second isolation regions to form a fin.
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