首页> 外国专利> Selective Sonication-Assisted Deposition Method of Inorganic Particles and CHA Zeolite Membranes Grown from Seeded Uniform Layers on Substrates Using the Method and Plate-like Si-CHA Zeolite Particles and Manufacturing Method of the Same

Selective Sonication-Assisted Deposition Method of Inorganic Particles and CHA Zeolite Membranes Grown from Seeded Uniform Layers on Substrates Using the Method and Plate-like Si-CHA Zeolite Particles and Manufacturing Method of the Same

机译:使用该方法和板状Si-CHA沸石颗粒的选择性超声辅助沉积方法从基底上均匀分布的种子层中生长的无机颗粒和CHA沸石膜及其制造方法

摘要

Provided is a selective sonication-assisted deposition method of inorganic particles and CHA zeolite membranes grown from seeded uniform layers on substrates using the method and plate-like Si-CHA zeolite particles used for seed layer formation and manufacturing method of the same, in which thin inorganic particles may be selectively deposited on a substrate or on a support, and even a physical interaction between the deposited particles and supports (or substrates) alone allows for obtaining high surface coverage to form a uniform layer, which is critical in reproducible production of membranes of inorganic materials, such as zeolite, by secondary growth.
机译:本发明提供了一种选择的超声辅助沉积方法,该方法利用该方法从种子均匀层在基板上生长的无机颗粒和CHA沸石膜以及用于种子层形成的板状Si-CHA沸石颗粒及其制造方法,其中薄无机颗粒可以选择性地沉积在基材上或载体上,甚至沉积颗粒与载体(或基材)之间的物理相互作用也可以单独获得高表面覆盖率以形成均匀的层,这对于可重复生产的膜至关重要通过二次生长形成无机材料,例如沸石。

著录项

  • 公开/公告号KR101460322B1

    专利类型

  • 公开/公告日2014-11-13

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20130044411

  • 发明设计人 최정규;김은주;카이 완;

    申请日2013-04-22

  • 分类号C01B39/02;B01J29/06;B01J20/18;B01D71/02;

  • 国家 KR

  • 入库时间 2022-08-21 15:01:20

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