首页>
外国专利>
Selective Sonication-Assisted Deposition Method of Inorganic Particles and CHA Zeolite Membranes Grown from Seeded Uniform Layers on Substrates Using the Method and Plate-like Si-CHA Zeolite Particles and Manufacturing Method of the Same
Selective Sonication-Assisted Deposition Method of Inorganic Particles and CHA Zeolite Membranes Grown from Seeded Uniform Layers on Substrates Using the Method and Plate-like Si-CHA Zeolite Particles and Manufacturing Method of the Same
The present invention relates to a selective sonication-assisted deposition method of inorganic particles using ultrasonic waves, CHA zeolite membranes grown from seeded uniform layers on substrates prepared thereby, plate-like Si-CHA zeolite particles used in the same, and a method for preparing the same and, more specifically, to a selective sonication-assisted deposition method of inorganic particles using ultrasonic waves, CHA zeolite membranes grown from seeded uniform layers on substrates prepared thereby, plate-like Si-CHA zeolite particles used in the same, and a method for preparing the same, which can selectively deposit thin particles on substrates or supports, and can obtain a high surface coverage only with physical bonding, thereby forming uniform layers playing a major role in preparing inorganic material membranes such as zeolite reproducibly through the secondary growth.
展开▼