首页> 外国专利> Develop level clipping circuit for clipping a develop level of a bitline pair, column path circuit including the same, and multi-port semiconductor memory device

Develop level clipping circuit for clipping a develop level of a bitline pair, column path circuit including the same, and multi-port semiconductor memory device

机译:显影电平限幅电路,用于限幅位线对的显影电平,包括该电平电平对的列路径电路,以及多端口半导体存储器件

摘要

bit line pair of Development Development Rob Rob level clipping level clipping circuit is connected to the supply voltage , write control block and a power supply voltage when the signal is activated , write control signal is connected between the first block and the first block and the bit line pair for supplying a power supply voltage when disabled , the supply voltage is supplied through the first block a pair of bit lines to a clipping level when the developmental Interesting includes a second block . Therefore, the developmental Interesting level clipping circuit is a multi- port semiconductor memory device can be prevented from interference by the skew (skew) and a noise (noise) between the multi- port address when contention occurs .
机译:位线对的开发开发Rob Rob电平削波电平削波电路连接到电源电压,写控制块和电源电压,当信号被激活时,写控制信号连接在第一个块和第一个块之间,并且该位当线对用于在禁用时提供电源电压时,当发展兴趣包括第二块时,通过第一块一对位线将电源电压供应到削波电平。因此,发展的兴趣电平限幅电路是一种多端口半导体存储器件,当竞争发生时,可以防止多端口地址之间的歪斜(skew)和噪声(噪声)干扰。

著录项

  • 公开/公告号KR101475346B1

    专利类型

  • 公开/公告日2014-12-23

    原文格式PDF

  • 申请/专利权人 삼성전자주식회사;

    申请/专利号KR20080063793

  • 发明设计人 이찬호;서동욱;

    申请日2008-07-02

  • 分类号G11C7/12;G11C5/14;G11C7/22;

  • 国家 KR

  • 入库时间 2022-08-21 15:01:02

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号