EPITAXY SUBSTRATE, METHOD FOR PRODUCING AN EPITAXY SUBSTRATE AND OPTOELECTRONIC SEMICONDUCTOR CHIP COMPRISING AN EPITAXY SUBSTRATE

摘要

An epitaxy substrate (11, 12, 13) for a nitride compound semiconductor material is specified, which has a nucleation layer (2) directly on a substrate (1) wherein the nucleation layer (2) has at least one first layer (21) composed of AlON with a column structure. A method for producing an epitaxy substrate and an optoelectronic semiconductor chip comprising an epitaxy substrate are furthermore specified.