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Epitaxy substrate, method for producing an epitaxy substrate and optoelectronic semiconductor chip comprising an epitaxy substrate
Epitaxy substrate, method for producing an epitaxy substrate and optoelectronic semiconductor chip comprising an epitaxy substrate
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机译:外延衬底,外延衬底的制造方法以及包括外延衬底的光电半导体芯片
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摘要
An epitaxy substrate (11, 12, 13) for a nitride compound semiconductor material is specified, which has a nucleation layer (2) directly on a substrate (1) wherein the nucleation layer (2) has at least one first layer (21) composed of AlON with a column structure. A method for producing an epitaxy substrate and an optoelectronic semiconductor chip comprising an epitaxy substrate are furthermore specified.
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