FINFET DEVICES INCLUDING HIGH MOBILITY CHANNEL MATERIALS WITH MATERIALS OF GRADED COMPOSITION IN RECESSED SOURCE/DRAIN REGIONS AND METHODS OF FORMING THE SAME

摘要

A FinFET device may include a high mobility semiconductor material in a Fin structure capable of providing a channel region to the FinFET device. A source/drain recess is formed to be adjacent to the Fin structure. An epi-growth semiconductor compound material of graded composition which includes the high mobility semiconductor material composition may be located in the source/drain recess.