/ FINFET DEVICES INCLUDING HIGH MOBILITY CHANNEL MATERIALS WITH MATERIALS OF GRADED COMPOSITION IN RECESSED SOURCE/DRAIN REGIONS AND METHODS OF FORMING THE SAME

摘要

The FinFET device may comprise a high mobility semiconductor material in the fin structure that may provide a channel region for the FinFET device. A source / drain recess is formed adjacent to the fin structure, and an epitaxial semiconductor compound material of graded composition comprising the high mobility semiconductor material component may be located in the source / drain recess.