AVALANCHE PHOTODIODES WITH DEFECT-ASSISTED SILICON ABSORPTION REGIONS

摘要

The avalanche photodiode has a defect silicon absorption region. One example includes a substrate, a silicon layer on the substrate, and a silicon layer comprising a positively doped region, a negatively doped region, and an absorptive region between the doped region and the negatively doped region in an amount, Which includes defects in its crystal structure, and a contact that is electrically conducting with a positively doped and negatively doped region to receive a bias potential.