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METHOD OF DESIGNING FIN FIELD EFFECT TRANSISTOR(FINFET)-BASED CIRCUIT AND SYSTEM FOR IMPLEMENTING THE SAME
METHOD OF DESIGNING FIN FIELD EFFECT TRANSISTOR(FINFET)-BASED CIRCUIT AND SYSTEM FOR IMPLEMENTING THE SAME
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机译:基于鳍式场效应晶体管的电路设计方法及实现该电路的系统
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摘要
A method of designing a fin field effect transistor (FinFET)-based circuit includes designing, by using a processor, a first circuit schematic design based on a performance specification, the first circuit schematic design is free of artificial elements, wherein the artificial elements are used to simulate electrical performance of the FinFET-based circuit. The method further includes modifying, by using the processor, at least one device within the first circuit schematic design to form a second circuit schematic design taking the artificial elements into consideration. The method further includes performing a pre-layout simulation by using the second circuit schematic and taking the artificial elements into consideration. The method further includes generating a layout, wherein the layout does not take the artificial elements into consideration, and performing a post-layout simulation, wherein the post-layout simulation does not take the artificial elements into consideration.
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