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METHOD OF DESIGNING FIN FIELD EFFECT TRANSISTOR(FINFET)-BASED CIRCUIT AND SYSTEM FOR IMPLEMENTING THE SAME

机译:基于鳍式场效应晶体管的电路设计方法及实现该电路的系统

摘要

A method of designing a fin field effect transistor (FinFET)-based circuit includes designing, by using a processor, a first circuit schematic design based on a performance specification, the first circuit schematic design is free of artificial elements, wherein the artificial elements are used to simulate electrical performance of the FinFET-based circuit. The method further includes modifying, by using the processor, at least one device within the first circuit schematic design to form a second circuit schematic design taking the artificial elements into consideration. The method further includes performing a pre-layout simulation by using the second circuit schematic and taking the artificial elements into consideration. The method further includes generating a layout, wherein the layout does not take the artificial elements into consideration, and performing a post-layout simulation, wherein the post-layout simulation does not take the artificial elements into consideration.
机译:一种设计基于鳍式场效应晶体管(FinFET)的电路的方法,该方法包括通过使用处理器设计基于性能规格的第一电路原理图设计,该第一电路原理图设计不含人造元素,其中人造元素为用于模拟基于FinFET的电路的电气性能。该方法还包括通过使用处理器来修改第一电路示意图设计内的至少一个装置以形成第二电路示意图设计,其中将人工元件考虑在内。该方法还包括通过使用第二电路原理图并考虑人工元件来执行预布局仿真。该方法还包括生成布局,其中布局不考虑人工元素,以及执行布局后仿真,其中布局后仿真不考虑人工元素。

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