METAL OXIDE LAYER COMPOSITION CONTROL BY ATOMIC LAYER DEPOSITION FOR THIN FILM TRANSISTOR

摘要

The present disclosure provides systems, methods, and apparatus for a thin film transistor (TFT) device on a substrate. In an aspect, the TFT device includes a gate electrode, an oxide semiconductor layer, and a gate insulator between the gate electrode and the oxide semiconductor layer. The oxide semiconductor layer includes at least two metal oxides, the two metal oxides having a concentration varying with respect to the other between the lower surface and the upper surface of the oxide semiconductor layer. The TFT device also includes a source metal adjacent to a portion of the oxide semiconductor layer and a drain metal adjacent to another portion of the oxide semiconductor layer. The composition of the oxide semiconductor layer can be precisely controlled by a sequential deposition technique using atomic layer deposition (ALD).