PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS

摘要

This invention is useful in the atomic layer deposition of thin films titanate (ALD) and chemical vapor deposition (CVD) barium, strontium, tantalum and lanthanum relates to a precursor composition. The precursors of the formula M (Cp) ₂ {expression, M is strontium, barium, tantalum or lanthanum, Cp are of the general formula I [formula, R ₁ - R ₅ each is the same or different, each independently represent hydrogen, C ₁ -C ₁₂ alkyl, C ₁ -C ₁₂ amino, C ₆ -C ₁₀ aryl, C ₁ -C ₁₂ alkoxy, C ₃ -C ₆ alkylsilyl, C ₂ -C ₁₂ alkenyl , R ¹ R ² R of ³ NNR ³ (formula, R ¹ , R ² and R ³ may be the same or different from each other, and each is independently hydrogen or C ₁ -C ₆ selected from alkyl), and a ligand selected from the pendant including a functional group (s) to provide a further coordinated to the metal center M] of the cyclopentadienyl nilim}. Precursor of the formula is useful for achieving a uniform coating of high dielectric constant material in the manufacture of the flash memory, and other microelectronic devices.