This invention relates to useful, barium, strontium, lanthanum, tantalum and the precursor composition in the atomic layer deposition (ALD) and chemical vapor deposition (CVD) of thin films titanate. The precursor is of formula M (Cp) 2 wherein, M is strontium, barium, tantalum or lanthanum, Cp has the formula I [formula, R 1 - R 5 and each is the same or different and each is independently hydrogen, C 1 -C 12 alkyl, C 1 -C 12 amino, C 6 -C 10 aryl, C 1 -C 12 alkoxy, C 3 -C 6 alkylsilyl, C 2 -C 12 alkenyl , R 1 R 2 R 3 NNR 3 (in the formula, R 1 , R 2 and R 3 may be the same or different from each other, and each is independently hydrogen and C 1 -C 6 is selected from the cyclopentadienyl nilim pendant ligand including a functional group (s) that provide for the coordination of the added selected), and the metal center M in the alkyl; The precursor of the formula is useful to achieve a uniform coating of high dielectric constant material in the manufacture of the flash memory, and other microelectronic devices.
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