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Manufacturing method of Si-SiOx Core-Shell Nanowire and Lithium Ion Battery using the Nanowire

机译:Si-SiOx核壳纳米线及使用该纳米线的锂离子电池的制造方法

摘要

The present invention relates to a method for manufacturing Si-SiO_x core-shell nanowire using a chemical vapor deposition (CVD) method. More particularly, the present invention relates to a method for manufacturing Si-SiO_x core-shell nanowire using a CVD method, the method including the steps of: disposing Si-SiO_x powder and a raw substrate in a heating part of a tube furnace; heating the heating part under inert atmosphere and maintaining the raised temperature; and depositing the Si-SiO_x powder on a surface of the substrate by heating the heating part to allow the temperature of the substrate to be adjusted to about 700 to 1000C. According to the present invention, Si-SiO_x powder is simply deposited on the substrate by a CVD method without use of any catalyst, so that a Si-SiO_x core-shell nanowire of about 30 nm or less may be synthesized. Since the nanowire thus synthesized is strongly anchored to the substrate without a binder or a conductor, a charge/discharge speed of a battery can be improved, and consequently the nanowire may be helpfully used as a material of an anode of a lithium-ion battery.
机译:本发明涉及使用化学气相沉积(CVD)方法制造Si-SiO_x核-壳纳米线的方法。更具体地,本发明涉及一种使用CVD方法制造Si-SiO_x核-壳纳米线的方法,该方法包括以下步骤:将Si-SiO_x粉末和未加工的基板放置在管式炉的加热部分中;以及将Si-SiO_x粉末和未加工的衬底放置在管式加热炉中。在惰性气氛下加热加热部件并保持升高的温度;通过加热加热部分以将基板的温度调节至约700至1000℃,并在基板的表面上沉积Si-SiO_x粉末。根据本发明,简单地通过CVD方法将Si-SiO_x粉末沉积在基板上而不使用任何催化剂,从而可以合成约30nm或更小的Si-SiO_x核-壳纳米线。由于这样合成的纳米线在没有粘合剂或导体的情况下牢固地锚定在基板上,因此可以提高电池的充电/放电速度,因此可以有利地用作锂离子电池的负极材料。 。

著录项

  • 公开/公告号KR101497203B1

    专利类型

  • 公开/公告日2015-02-27

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20130028726

  • 发明设计人 신현석;

    申请日2013-03-18

  • 分类号H01M4/1395;H01M10/0525;

  • 国家 KR

  • 入库时间 2022-08-21 14:58:35

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