首页> 外国专利> Fabrication method of nanopore, analysis system and method for realtime molecular sequencing using the nanopore

Fabrication method of nanopore, analysis system and method for realtime molecular sequencing using the nanopore

机译:纳米孔的制造方法,使用该纳米孔的实时分子测序的分析系统和方法

摘要

The present invention relates to a nanopore manufacturing method, a nanopore manufactured by the manufacturing method, a real time molecular sequence analysis system using the nanopore, and a method of analyzing molecular sequences of the biopolymer using the nanopore. More particularly, the present invention relates to a method of manufacturing a nanopore, comprising: forming a first thin film on a top surface of a substrate; Removing the first thin film and a portion of the substrate using a lithography process and an etching process to form an alignment mark on the outer periphery of each of the upper and lower surfaces of the substrate on which the first thin film is formed; Etching the center side of the lower surface of the substrate until the center of the lower surface of the first thin film is exposed using a lithography process and an etching process; Forming a nano hole at the center of the first thin film using a lithography process and an etching process; Depositing a second thin film one or more times to reduce the diameter of the nano holes; Placing a third thin film layer on top; Forming a fourth thin film on the upper surface of the third thin film to protect the third thin film; Forming an nano-pore at the center of the third thin film by applying an etching process from the bottom of the substrate; And partially etching the second thin film and the fourth thin film.
机译:本发明涉及纳米孔的制造方法,通过该制造方法制造的纳米孔,使用该纳米孔的实时分子序列分析系统以及使用该纳米孔分析生物聚合物的分子序列的方法。更具体地,本发明涉及一种制造纳米孔的方法,该方法包括:在基板的顶表面上形成第一薄膜;以及在基板的上表面上形成第一薄膜。使用光刻工艺和蚀刻工艺去除第一薄膜和部分基板,以在其上形成有第一薄膜的基板的上,下表面的每个的外周上形成对准标记;刻蚀基板的下表面的中心侧,直到通过光刻工艺和蚀刻工艺暴露出第一薄膜的下表面的中心为止。使用光刻工艺和蚀刻工艺在第一薄膜的中心形成纳米孔;沉积第二薄膜一次或多次以减小纳米孔的直径;在顶部放置第三薄膜层;在第三薄膜的上表面上形成第四薄膜以保护第三薄膜;通过从基板的底部进行蚀刻工艺,在第三薄膜的中心形成纳米孔;并部分蚀刻第二薄膜和第四薄膜。

著录项

  • 公开/公告号KR101528488B1

    专利类型

  • 公开/公告日2015-06-12

    原文格式PDF

  • 申请/专利权人 나노칩스 (주);

    申请/专利号KR20120006550

  • 发明设计人 최중범;이종진;

    申请日2012-01-20

  • 分类号B82B3;C12Q1/68;G01N27/26;

  • 国家 KR

  • 入库时间 2022-08-21 14:58:06

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