Method of Manufacturing Semiconductor Element Using Laser Lift-Off Process and Double Transference

摘要

According to the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a semiconductor layer on a substrate; A first transfer step of transferring the semiconductor layer to a first flexible film through a laser lift-off process; And a second transfer step of transferring the semiconductor layer from the first flexible film to the second flexible film. The present invention also provides a laser lift-off process and a method of manufacturing a semiconductor device using dual transfer. According to the present invention, the semiconductor layer can be separated so that the surface exposed when the semiconductor layer is grown is exposed to the outside.