METHOD FOR GROWING VARIOUS KINDS OF SEMICONDUCTOR EPITAXIAL LAYERS ON SILICON (001) SUBSTRATE

摘要

The present invention relates to a method for forming a semiconductor device with high quality on a silicon substrate and, more particularly, to a method for growing a semiconductor epitaxial layer on a silicon substrate. The method for growing the semiconductor epitaxial layer on the silicon substrate according to the embodiment of the present invention includes a first step of forming an aspect ratio trapping (ART) pattern by an insulation material, a second step of forming an arrow aspect ratio trapping (AART) pattern, a third step of forming an undercut on an interface of silicon and the insulation material, and a fourth step of growing the semiconductor layer on the upper sides of the AART pattern region and the ART pattern region.;COPYRIGHT KIPO 2015