Phase change memory cell with a phase change - storage material with a limited resistance, a process for the preparation of such a memory cell and an integrated circuit with a corresponding memory cell

摘要

The phase change memory - memory cell with:a first electrode and a second electrode;a composite material, wherein the composite material the first electrode is electrically connected to the second electrode and a phase change material and a resistor material;wherein at least a part of the phase change material is arranged such that it in response to an application of a switching signal to the first and / or the second electrode between a a specific memory state corresponding, essentially crystalline phase and a another specific memory state corresponding, essentially amorphous phase changes, andthe resistor material in a plurality of discrete clusters is arranged and a resistance which is smaller than that of the phase change material, if the phase change material are in the substantially amorphous phase.