Soi - unit which comprises the following:a fet - region (22), which a gate (58) of a fet transistor on an soi - layer (34) comprises;a sti - region, which a first sti - layer (sti - 1), having the soi - unit from an adjacent soi - unit, wherein the first sti - layer has a first thickness;a body contact region (24) between the fet - region and the sti - region, wherein the body contact region an extension (35) of the soi - layer as well as a second sti - layer (sti - 2), which a second thickness, whereby the soi - layer and the soi - extension of a deep troughs doping in order to have a resistance of the soi - layer and of the soi - extension to reduce, wherein a thickness of the soi - extension is less than a thickness of the soi - layer, wherein a concentration of the doping in the soi - extension is maximized in such a way that it has a threshold voltage of the fet transistor is not adversely affected, and wherein in the case that the fet transistor is an n - channel - fet transistor, the doping has a p - type, and in the case that the fet transistor, a p - channel - fet transistor, the doping has an n - type; anda physical contact (67) in contact with the soi - extension;the first thickness of the second thickness and the first and second sti - layer form a stepped sti.
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