MEMORY DEVICE ASSOCIATING A SRAM TYPE MEMORY PLAN AND A NON-VOLATILE TYPE MEMORY PLAN, AND METHODS OF OPERATION

摘要

A memory device comprising at least one memory cell having a first SRAM elementary memory cell (CELSR) having two mutually cross-connected inverters, two groups each having at least one nonvolatile elementary memory cell, the cells non-volatile elementary memories (E1, E2) of the two groups being connected on the one hand to a power supply terminal (BAL) and on the other hand to the outputs and inputs of the two inverters via a stage of controllable interconnection (N2, N7, N4, N5).