METHOD FOR MANAGING THE OPERATION OF A MEMORY DEVICE HAVING A MEMORY PLAN OF THE SRAM TYPE AND A MEMORY PLAN OF THE NON-VOLATILE TYPE, AND MEMORY DEVICE CORRESPONDING THERETO

摘要

A method of managing the operation of a set of at least one memory cell (CEL) of the type comprising an SRAM elementary memory cell (CELSR) and at least one mutually coupled non-volatile elementary memory cell (CELNV), said at least one memory cell being configured to perform a data value inversion upon reloading into the SRAM elementary memory cell of a previously written data in said at least one non-volatile elementary cell, comprising, at each transferring a datum of said SRAM elementary memory cell (CELSR) into said at least one non-volatile elementary memory cell (CELNV) and each reloading of said SRAM elementary memory cell, a respective implementation of the same operations on a control data of a control memory cell (CELT) functionally analogous and associated with said at least one memory cell, and each reading (22) of a data element of said SRAM elementary memory cell, a corresponding reading (23) of the control data item, and an inversion or not of the data read in said elementary memory cell SRAM (CELSR) as a function of the value read from the control data.