COMPACT MEMORY DEVICE ASSOCIATING A MEMORY PLAN OF THE SRAM TYPE AND A MEMORY PLAN OF THE NON-VOLATILE TYPE, AND METHODS OF OPERATION

摘要

Memory device, comprising at least one memory cell (CEL) comprising a SRAM elementary memory cell (CELSR) and a single non-volatile elementary memory cell of the EEPROM type (E1) connected between a power supply terminal (BAL ) and the SRAM elementary memory cell (CELSR).