MEMORY DEVICE ASSOCIATING A MEMORY PLAN OF THE SRAM TYPE AND A NON-VOLATILE TYPE MEMORY PLAN CURED AGAINST ACCIDENTAL TILT

摘要

The PMOS transistors (P1, P2) of the elementary memory cell of the SRAM type (CELSR) are equipped with a capacitor (C1, C2) whose first electrode (ELC1) is formed by the gate of the corresponding transistor and whose second electrode (ELC2) is connected for example to the output of the corresponding inverter.