CMOS COMPATIBLE ULTRAVIOLET SENSOR DEVICE AND METHOD OF PRODUCING A CMOS COMPATIBLE ULTRAVIOLET SENSOR DEVICE

摘要

The ultraviolet sensor device comprises a semiconductor substrate (1), a dielectric layer (5) above the substrate, a surface (15) of the dielectric layer that is provided for the incidence of ultraviolet radiation, a floating gate electrode (18) in the dielectric layer and an electrically conductive control gate electrode (2) near the floating gate electrode. The control gate electrode (2) is insulated from the floating gate electrode (18). A sensor layer is formed by the floating gate electrode or by an electrically conductive further layer (20) that is electrically conductively connected to the floating gate electrode. The control gate electrode is arranged outside a region that is located between the sensor layer and the surface provided for the incidence of ultraviolet radiation. The sensor layer is discharged by incident UV radiation and can be charged or discharged electrically by charging or discharging the floating gate electrode. A silicide layer (19) may be provided which forms part of the sensor layer and adapts the onset of the detection of ultraviolet radiation.