首页> 外国专利> MONOLITHIC THREE DIMENSIONAL (3D) INTEGRATED CIRCUITS (ICS) (3DICS) WITH VERTICAL MEMORY COMPONENTS

MONOLITHIC THREE DIMENSIONAL (3D) INTEGRATED CIRCUITS (ICS) (3DICS) WITH VERTICAL MEMORY COMPONENTS

机译:具有垂直内存组件的单维三维(3D)集成电路(ICS)(3DICS)

摘要

Monolithic three dimensional (3D) integrated circuits (ICs) (3DICs) with vertical memory components are disclosed. A 3D memory crossbar architecture with tight-pitched vertical monolithic intertier vias (MIVs) for inter-block routing and multiplexers at each tier for block access is used to shorten overall conductor length and reduce resistive-capacitive (RC) delay. Elimination of such long crossbars reduces the RC delay of the crossbar and generally improves performance and speed. Further, elimination of the long horizontal crossbars makes conductor routing easier. The MIVs, with their small run-length, can work without the need for repeaters (unlike the long crossbars), and control logic may be used to configure the memory banks based on use.
机译:公开了具有垂直存储器组件的单片三维(3D)集成电路(IC)(3DIC)。具有缩短间距的垂直单片层间通孔(MIV)的块间布线和每层的多路复用器以进行块访问的3D存储器交叉开关体系结构可用于缩短整体导体长度并减少电阻电容(RC)延迟。消除这种长的交叉开关可减少交叉开关的RC延迟,并通常提高性能和速度。此外,省去了较长的水平横杆,使导体布线更容易。 MIV的游程很短,无需中继器即可工作(不同于长的交叉开关),并且控制逻辑可用于根据使用来配置存储体。

著录项

  • 公开/公告号EP3060967A1

    专利类型

  • 公开/公告日2016-08-31

    原文格式PDF

  • 申请/专利权人 QUALCOMM INCORPORATED;

    申请/专利号EP20140790943

  • 发明设计人 KAMAL PRATYUSH;DU YANG;SAMADI KAMBIZ;

    申请日2014-10-15

  • 分类号G06F1/32;H01L27/06;

  • 国家 EP

  • 入库时间 2022-08-21 14:49:25

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