1T COMPACT ROM CELL WITH DUAL BIT STORAGE FOR HIGH SPEED AND LOW VOLTAGE

摘要

Disclosed is a ROM memory device including a plurality of rows and columns of memory cells, each memory cell including a bit line pair and a transistor to store two bits of data therein, and a virtual ground line disposed between adjacent pairs of bit line pairs, wherein the bit line pair and virtual ground line are used to read data stored in the memory cells.