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Infrared photodetector stable in air from inorganic semiconductors made from solution
Infrared photodetector stable in air from inorganic semiconductors made from solution
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机译:由溶液制成的无机半导体在空气中稳定的红外光电探测器
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摘要
The photodetector has a photoactive layer of semiconductor inorganic nanoparticles located between the hole transport electron blocking layer of the first metal oxide and the electron transport hole blocking layer of the second metal oxide. Nanoparticles respond to electromagnetic radiation in at least the infrared region of the spectrum. The first metal oxide can be NiO and the second metal oxide can be ZnO or TiO2. The metal oxide layer stabilizes the photodetector in air, even when there is no encapsulating coating around the photodetector. The photodetector has a P-I-N structure. [Selection] Figure 1A
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