Organic and Inorganic Blocking Layers for Solution- Processed Colloidal PbSe Nanocrystal Infrared Photodetectors

摘要

A PbSe solution-processed nanocrystal-based infrared photodetector incorporating carrier blocking layers is demonstrated, and significant reduction of dark current is achieved. Detectivity values close to 10~(12) Jones are achieved by using poly[(9,9'-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butyl))diphe-nylamine)] (TFB) and ZnO nanocrystals (NC) as the electron blocker and hole blocker, respectively. An improvement in lifetime is also observed in the devices with the ZnO NCs hole blocking layer.