IMPURITY DIFFUSION LAYER-FORMING COMPOSITION, METHOD FOR MANUFACTURING IMPURITY DIFFUSION LAYER-ATTACHED SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SOLAR BATTERY ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide an impurity diffusion layer-forming composition which enables the suppression of the increase in the contact area of an impurity diffusion layer-forming composition layer on a semiconductor substrate in a surface direction thereof when forming the impurity diffusion layer-forming composition layer by adding to a partial region on the semiconductor substrate.SOLUTION: An impurity diffusion layer-forming composition comprises: a compound including a donor element or a compound including an acceptor element; a dispersant; and a compound expressed by the following general formula (I). In the general formula (I), Rand Rindependently a hydrogen atom or an alkyl group, Rrepresents an alkylene group, and "n" represents an appropriate integer of 1 or larger.SELECTED DRAWING: None