DIFFUSION AND SOLUBILITY OF IMPURITY ELEMENTS IN COMPOUND SEMICONDUCTORS

摘要

The work under the contract and grant has included studies on:l) the diffusion, solubility and distribution coefficient of impurity elements in 111 - V compound semiconductors, 2) the development and fabrication of subnanosecond gallium arsenide switching diodes, 3) the electrical properties of thin diffused layers of zinc in gallium arsen-ide, and 4) the defect structure of quenched and annealed, single-crystal gallium arsenide.