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METHOD AND APPARATUS FOR GROWING Fe-Ga-BASED ALLOY SINGLE CRYSTAL

机译:生长基于Fe-Ga的合金单晶的方法和装置

摘要

PROBLEM TO BE SOLVED: To provide an Fe-Ga-based alloy single crystal that can be produced in the form of a large crystal with a highly accurate chemical composition and a highly accurate crystal orientation at a low cost, and to provide a method for growing the Fe-Ga-based alloy single crystal.SOLUTION: In a method and apparatus for growing an Fe-Ga-based alloy single crystal, a crucible to be used is a double crucible consisting of an outer crucible 19 made of graphite and an inner crucible 18 made of alumina arranged in the outer crucible 19, and after a seed crystal 210 is brought into contact with an Fe-Ga material 300 melt in the crucible, the seed crystal 210 is pulled up to grow a single crystal 200. In the method for growing the Fe-Ga-based alloy single crystal, a material of the inner crucible 18 may be a non-oxide ceramic such as boron nitride, whereby generation of suspended matter such as Ga oxides and Ga-Al-O-C compounds is suppressed during the growth of the single crystal to prevent the polycrystallization and hollowing of the crystal due to the suspended matter.SELECTED DRAWING: Figure 1
机译:解决的问题:以低成本提供一种可以以大晶体的形式生产具有高精度化学成分和高精度晶体取向的铁-镓基合金单晶,并提供一种制造方法。解决方案:在用于生长Fe-Ga基合金单晶的方法和设备中,要使用的坩埚是由石墨制成的外坩埚19和一个由石墨制成的外坩埚组成的双坩埚。在外部坩埚19中布置由氧化铝制成的内部坩埚18,并且在使晶种210与在坩埚中熔融的Fe-Ga材料300接触之后,将晶种210拉起以生长单晶200。在生长Fe-Ga基合金单晶的方法中,内坩埚18的材料可以是非氧化物陶瓷,例如氮化硼,从而产生悬浮物,例如Ga氧化物和Ga-Al-OC化合物。在单个晶体的生长过程中被抑制l防止由于悬浮物引起的晶体多晶化和空心化。图1

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