A method of forming it metal interconnect structure and (microstructure changes in the copper interconnect structure)

摘要

To provide a method for producing a metal interconnect structure and a metal interconnect structure. A copper (Cu) interconnect structure to modify the microstructure to achieve a crystal grain boundary of the bamboo style below 90nm technologies manganese (Mn) are incorporated into. Preferably, as copper that penetrate the grain boundaries (Cu) diffusion is avoided, bamboo grains are separated to a distance less than "Blech" length. Moreover, Mn which is added to induce growth of the Cu particles down to the bottom surface of the metal wire, the result is true bamboo microstructure reaching the bottom forming, the crystal grain boundaries which are directed along the length of the metal wire Cu diffusion mechanism along is removed. .BACKGROUND