RESISTIVITY CONTROL METHOD, ADDITIONAL DOPANT FEED DEVICE, AND N-TYPE SILICON SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a resistivity control method capable of suppressing a decrease in yield and also precisely controlling resistivity when silicon single-crystal raising by a CZ method is interrupted, and a silicon single crystal having been raised is molten again to be raised again.;SOLUTION: A resistivity control method of controlling resistivity of a silicon single crystal raised by a CZ method with a dopant includes the processes of: performing initial doping with a main dopant so that the silicon single crystal has a predetermined conductivity type; and performing continuous or intermittent additional doping with a sub-dopant having the opposite conductivity type from the main dopant according to a solidification rate while raising the silicon single crystal, in which the raising of the silicon single crystal interrupted and the silicon single crystal having been raised is molten again to be raised again, the silicon single crystal is raised again after being doped with the main dopant by such an amount that top-side resistivity of a product part is within a standard if additional dopant with the sub-dopant is performed before the interruption.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2016,JPO&INPIT