首页>
外国专利>
Thin film semiconductor material formed by reactive sputtering of zinc target using nitrogen gas
Thin film semiconductor material formed by reactive sputtering of zinc target using nitrogen gas
展开▼
机译:通过氮气对锌靶进行反应溅射形成的薄膜半导体材料
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention generally comprises a semiconductor film and the reactive sputtering process used to deposit the semiconductor film. The sputtering target may comprise pure zinc (i.e., 99.995 atomic percent or greater), which may be doped with aluminum (about 1 atomic percent to about 20 atomic percent) or other doping metals. The zinc target may be reactively sputtered by introducing nitrogen and oxygen to the chamber. The amount of nitrogen may be significantly greater than the amount of oxygen and argon gas. The amount of oxygen may be based upon a turning point of the film structure, the film transmittance, a DC voltage change, or the film conductivity based upon measurements obtained from deposition without the nitrogen containing gas. The reactive sputtering may occur at temperatures from about room temperature up to several hundred degrees Celsius. After deposition, the semiconductor film may be annealed to further improve the film mobility.
展开▼