RADICAL ENHANCED ATOMIC LAYER DEPOSITION USING CF4 FOR PROMOTING OXYGEN RADICAL FORMATION

摘要

PROBLEM TO BE SOLVED: To provide a method for carrying out a RE-ALD treatment having a high deposition speed.;SOLUTION: A method for carrying out a radical enhanced atomic layer deposition (RE-ALD) on the surface of a substrate 142 in a reaction chamber 20 includes a step for supplying a gas mixture 112 of CF4 gas and O2 gas, a step for forming plasma from the gas mixture to produce an oxygen radical at a higher speed than in a case using a gas mixture 112 excluding CF4 gas, and a step for continuously supplying the oxygen radical and a precursor gas 116 into the reaction chamber 20 to form a metal oxide film made of a metal organic precursor on the surface of the substrate 142. The CF4 gas has a concentration in the range of from 0.1 vol.% to 10 vol.%.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2016,JPO&INPIT