RADICAL ENHANCED ATOMIC LAYER DEPOSITION USING CF_4 TO ENHANCE OXYGEN RADICAL GENERATION

摘要

The present invention provides a method for performing a radical enhanced atomic layer deposition process to a surface of a substrate positioned on the interior of a reactor chamber. The method for performing the radical enhanced atomic layer deposition process comprises: a step of forming plasma from a gas mixture consisting of carbon tetrafluoromethane (CF_4) and oxygen molecules (O_2), wherein the CF_4 exists with a density in a range of 0.1 vol% to 10 vol%. The plasma formed from the gas mixture further rapidly generates an oxygen radical (O^*) in comparison with a case where the CF_4 does not exist in the gas mixture. The method for performing the radical enhanced atomic layer deposition process further comprises: a step of sequentially supplying the oxygen radical and a precursor gas to the interior of the reactor chamber to form an oxidized film on the surface of the substrate. Furthermore, the present invention provides a system to perform the radical enhanced atomic layer deposition process using the rapidly-generated oxygen radical.;COPYRIGHT KIPO 2016