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NAND memory arrays without cell pitch and bit line pitch matching
NAND memory arrays without cell pitch and bit line pitch matching
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机译:没有单元间距和位线间距匹配的NAND存储器阵列
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摘要
Embodiments of the present disclosure describe methods, apparatus, and system configurations for NAND memory arrays with mismatched cell and bitline pitch. Other embodiments may be described and claimed.
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