Method for determining the activity doping concentration of the doped semiconductor region

摘要

System (200) and a method for determining optically the doping profile activated almost completely is described. Doping profile activated almost completely, is characterized by a set of physical parameters. The method (200), and that the sample containing the doping profile was fully activated, and to obtain a reference, for the reference and the sample containing the doping profile was fully activated, light modulation reflectance (PMOR) offset to obtain a DC reflectometry data and curve measurement data (210, 230), based on both the light modulation reflectance offset curve measurement values ​​and DC reflectance measurements, the values ​​for the set of physical parameters of the doping profile and a (220, 240) to be determined.