Nano-hetero structure pn junction device and a method of manufacturing the same

摘要

PROBLEM TO BE SOLVED: To provide a pn-junction element having a nanostructure and excellent in photoelectric conversion efficiency such as light-emitting efficiency.;SOLUTION: The nano-heterostructure pn-junction element comprises: a nano-heterostructure body, having a three-dimensional periodic structure in which an average value of a unit length of the repeated structure is 1 to 100nm, and in a matrix composed of one inorganic component out of a p-type semiconductor material and an n-type semiconductor material, the other inorganic component, out of the p-type semiconductor material and the n-type semiconductor material, having a shape selected from a group composed of a columnar shape, a gyroid shaped, and a layer shape, is arranged three-dimensionally and periodically; a p-type semiconductor material; and an n-type semiconductor material. The nano heterostructure body is sandwiched between the p-type semiconductor layer and the n-type semiconductor layer so that an end part of a pn junction surface formed with the p-type semiconductor material and the n-type semiconductor material in the nano-heterostructure body is brought in contact with at least one of surfaces of semiconductor layers out of the p-type semiconductor layer and the n-type semiconductor layer.;COPYRIGHT: (C)2013,JPO&INPIT