Conductive film for the material, the conductive film laminate, a manufacturing method of an electronic device, and a conductive film for the material and the conductive film laminates

摘要

is easy to crystallize by heat treatment, the sheet resistance value when the crystallization is low and to provide a conductive film for a material having an amorphous layer in which an increase in thickness is suppressed. Conductive film for the material has a transparent substrate, and an amorphous layer of indium tin oxide is laminated on the transparent substrate. The amorphous layer is made of indium tin oxide containing from 5.5 to 9 wt% of tin oxide in terms of a thickness of 15~25nm, and a sheet resistance value when crystallized 50~150 / is intended to be.