A Method for Growing GZO (ZnO:Ga) Crystals

摘要

The disclosure provides a method for growing GZO (ZnO:Ga) single crystals and relates to the technical field of crystal growth. The method may include the following steps: firstly, preparing compact, uniform and single-phase polycrystalline rods; secondly, optimizing the components and the proportions of flux; finally, optimizing the process parameters of travelling solvent floating zone crystal growth method for GZO, such as growth power, growth rate and rotation speed, etc. GZO crystals grown by this disclosure are high in crystalline quality, consistent in growth direction and excellent in electrical properties.