首页>
外国专利>
METAL OXIDE THIN FILM TRANSISTOR WITH SOURCE AND DRAIN REGIONS DOPED AT ROOM TEMPERATURE
METAL OXIDE THIN FILM TRANSISTOR WITH SOURCE AND DRAIN REGIONS DOPED AT ROOM TEMPERATURE
展开▼
机译:室温下掺杂有源区和漏区的金属氧化物薄膜晶体管
展开▼
页面导航
摘要
著录项
相似文献
摘要
Thin film transistors are provided that include a metal oxide active layer with source and drain regions having a reduced resistivity relative to the metal oxide based on doping of the source and drain regions at room temperature. In an aspect, a transistor structure is provided, that includes a substrate, and source and drain regions within a doped active layer having resulted from doping of an active layer comprising metal-oxide and formed on the substrate, wherein the doped active layer was doped at room temperature and without thermal annealing, thereby resulting in a reduction of a resistivity of the source and drain regions of the doped active layer relative to the active layer prior to the doping. In an aspect, the source and drain regions have a resistivity of about 10.0 mΩ·cm after being doped with stable ions and without subsequent activation of the ions via annealing.
展开▼