首页> 外国专利> ACTIVATION CHAMBER AND KIT USED IN TREATMENT DEVICE FOR LOWERING ELECTRON AFFINITY, TREATMENT DEVICE THAT CONTAINS SAID KIT AND IS USED TO LOWER ELECTRONIC AFFINITY, PHOTOCATHODE ELECTRON-BEAM SOURCE, ELECTRON GUN CONTAINING PHOTOCATHODE ELECTRON-BEAM SOURCE, FREE-ELECTRON LASER ACCELERATOR, TRANSMISSION ELECTRON MICROSCOPE, SCANNING ELECTRON MICROSCOPE, ELECTRON-BEAM HOLOGRAPHY MICROSCOPE, ELECTRON-BEAM LITHOGRAPHY DEVICE, ELECTRON-BEAM DIFFRACTION DEVICE, AND ELECTRON-BEAM SCANNING DEVICE

ACTIVATION CHAMBER AND KIT USED IN TREATMENT DEVICE FOR LOWERING ELECTRON AFFINITY, TREATMENT DEVICE THAT CONTAINS SAID KIT AND IS USED TO LOWER ELECTRONIC AFFINITY, PHOTOCATHODE ELECTRON-BEAM SOURCE, ELECTRON GUN CONTAINING PHOTOCATHODE ELECTRON-BEAM SOURCE, FREE-ELECTRON LASER ACCELERATOR, TRANSMISSION ELECTRON MICROSCOPE, SCANNING ELECTRON MICROSCOPE, ELECTRON-BEAM HOLOGRAPHY MICROSCOPE, ELECTRON-BEAM LITHOGRAPHY DEVICE, ELECTRON-BEAM DIFFRACTION DEVICE, AND ELECTRON-BEAM SCANNING DEVICE

机译:活化室和套件,用于处理设备中以降低电子亲和力,包含所述成套工具并用于降低电子亲和力的处理设备,光电阴极电子束源,含有电子枪的电子枪,包含电子的电极,电阴极,电子电极显微镜,扫描电子显微镜,电子束全息照相术,电子束光刻设备,电子束衍射设备和电子束扫描设备

摘要

This invention provides a treatment device for lowering electron affinity, said treatment device being capable of performing an EA surface treatment on a photocathode material or an EA surface retreatment on a photocathode, and an electron-beam device provided with said treatment device. An activation chamber (20) used in a treatment device for lowering electron affinity by vaporizing a surface-treatment material (30) and using the vaporized surface-treatment material (30) to perform an electron-affinity lowering treatment on a photocathode material (52) or an electron-affinity lowering retreatment on a photocathode (52), said activation chamber (20) being characterized by containing holes through which electrons can pass.
机译:本发明提供了一种用于降低电子亲和力的处理装置,所述处理装置能够在光电阴极材料上进行EA表面处理或在光电阴极上进行EA表面再处理,并且提供了一种具有所述处理装置的电子束装置。在处理装置中使用的活化室( 20 ),用于通过蒸发表面处理材料( 30 )和使用蒸发的表面处理材料( > 30 )对光阴极材料( 52 )进行电子亲和力降低处理,或对光阴极材料( 52 )进行电子亲和力降低处理,所述活化室( 20 )的特征在于包含电子可以穿过的空穴。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号